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| STBV32 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n n HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED Figure 1: Package APPLICATIONS n COMPACT FLUORESCENT LAMPS (CFLS) DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV series is designed for use in Compact Fluorescent Lamps. TO-92 Figure 2: Internal Schematic Diagram Table 1: Order Codes Part Number STBV32 STBV32-AP Marking BV32 BV32 Package TO-92 TO-92 Packaging Bulk Ammopack Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot April 2005 Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0, IB = 0.5 A, tp < 10 ms) Collector Current (f 100 Hz, duty-cycle 50 %, TC = 25 C) Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 oC 3 0.5 1.5 1.5 Rev. 2 A A A W 1/9 o Value 700 400 V(BR)EBO 1.5 Unit V V V A STBV32 Symbol Tstg TJ Storage Temperature Max. Operating Junction Temperature Parameter Value -65 to 150 150 Unit C C Table 3: Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-Ambient Max Max 83.3 112 oC/W o C/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICEV V(BR)EBO Parameter Collector Cut-off Current VCE = 700 V (VBE = -1.5 V) Emitter-Base Breakdown Voltage (IC = 0 ) VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VCE(sat)* Collector-Emitter Saturation Voltage IC = 0.5 A IC = 1 A IC = 1.5 A VBE(sat)* hFE Base-Emitter Saturation IC = 0.5 A Voltage IC = 1 A DC Current Gain RESISTIVE LOAD tr ts tf ts Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time IC = 1 A IB1 = 200 mA L = 50 mH * Pulsed: Pulsed duration = 300 s, duty cycle 1.5 %. Test Conditions o Min. Typ. Max. 1 5 Unit mA mA V VCE = 700 V IE = 10 mA Tj =125 C 9 18 IC = 10 mA 400 V IB = 100 mA IB = 250 mA IB = 500 mA IB = 100 mA IB = 250 mA VCE = 2 V VCE = 2 V VCC = 125 V tp = 25 s 8 5 0.5 1 1.5 1.0 1.2 35 25 1 4 0.7 V V V V V IC = 0.5 A IC = 1 A IC = 1 A IB1 = -IB2 = 200 mA (see figure 12) s s s s Vclamp = 300 V VBE(off) = -5V RBB = 0 0.8 (see figure 13) 2/9 STBV32 Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: Output Characteristics Figure 7: Collector-Emitter Saturation Voltage Figure 5: Base-Emitter Saturation Voltage Figure 8: DC Current Gain 3/9 STBV32 Figure 9: DC Current Gain Figure 11: Inductive Load Switching Times Figure 10: Reverse Biased Operating Area 4/9 STBV32 Figure 12: Resistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor Table 13: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier 5/9 STBV32 TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5O TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 A b D E e e1 L R S1 W V 0102782 C 6/9 STBV32 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA mm. TYP DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 12.70 6.35 2.54 18.00 6.00 9.00 16.00 4.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 3.00 -1.00 7/9 STBV32 Figure 1: Revision History Version 01-Dec-2002 27-Apr-2005 Release Date 1 1 Change Designator First Release. Total dissipation value has been modified. 8/9 STBV32 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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